MPS3563G Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) 6.5dB @ 60MHz Gain 14dB @ 200MHz Power - Max 350W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) 6.5dB @ 60MHz Gain 14dB @ 200MHz Power - Max 350W DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Power - Max 350mW Frequency - Transition 600MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Power - Max 350mW Frequency - Transition 600MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
