MSRT20080(A) Datasheet
|
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.2V @ 200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 600V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
