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MUN5130DW1T1G Datasheet

MUN5130DW1T1G Datasheet
Total Pages: 6
Size: 69.83 KB
ON Semiconductor
This datasheet covers 2 part numbers: MUN5130DW1T1G, NSBA113EDXV6T1G
MUN5130DW1T1G Datasheet Page 1
MUN5130DW1T1G Datasheet Page 2
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MUN5130DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1kOhms

Resistor - Emitter Base (R2)

1kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

3 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

NSBA113EDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1kOhms

Resistor - Emitter Base (R2)

1kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

3 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363