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NDDP010N25AZ-1H Datasheet

NDDP010N25AZ-1H Datasheet
Total Pages: 6
Size: 383.36 KB
ON Semiconductor
This datasheet covers 2 part numbers: NDDP010N25AZ-1H, NDDP010N25AZT4H
NDDP010N25AZ-1H Datasheet Page 1
NDDP010N25AZ-1H Datasheet Page 2
NDDP010N25AZ-1H Datasheet Page 3
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NDDP010N25AZ-1H Datasheet Page 6
NDDP010N25AZ-1H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

980pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK/TP

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NDDP010N25AZT4H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

980pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 52W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK/TP-FA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63