NIF9N05CLT1G Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 59V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 35V FET Feature - Power Dissipation (Max) 1.69W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 59V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 35V FET Feature - Power Dissipation (Max) 1.69W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 52V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 35V FET Feature - Power Dissipation (Max) 1.69W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 52V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 35V FET Feature - Power Dissipation (Max) 1.69W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
