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NLAS3799MNR2G Datasheet

NLAS3799MNR2G Datasheet
Total Pages: 11
Size: 163.43 KB
ON Semiconductor
This datasheet covers 2 part numbers: NLAS3799MNR2G, NLAS3799LMNR2G
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NLAS3799MNR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Switch Circuit

DPDT

Multiplexer/Demultiplexer Circuit

2:2

Number of Circuits

2

On-State Resistance (Max)

400mOhm

Channel-to-Channel Matching (ΔRon)

50mOhm (Max)

Voltage - Supply, Single (V+)

1.65V ~ 3.6V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

50ns, 30ns

-3db Bandwidth

19MHz

Charge Injection

42pC

Channel Capacitance (CS(off), CD(off))

3pF

Current - Leakage (IS(off)) (Max)

500nA

Crosstalk

-90dB @ 100kHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

16-WFQFN

Supplier Device Package

16-WQFN (1.8x2.6)

NLAS3799LMNR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Switch Circuit

DPDT

Multiplexer/Demultiplexer Circuit

2:2

Number of Circuits

2

On-State Resistance (Max)

400mOhm

Channel-to-Channel Matching (ΔRon)

50mOhm (Max)

Voltage - Supply, Single (V+)

1.65V ~ 3.6V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

50ns, 30ns

-3db Bandwidth

19MHz

Charge Injection

42pC

Channel Capacitance (CS(off), CD(off))

3pF

Current - Leakage (IS(off)) (Max)

500nA

Crosstalk

-90dB @ 100kHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

16-WFQFN

Supplier Device Package

16-WQFN (1.8x2.6)