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NP160N04TUJ-E2-AY Datasheet

NP160N04TUJ-E2-AY Datasheet
Total Pages: 8
Size: 196.55 KB
Renesas Electronics America
This datasheet covers 2 part numbers: NP160N04TUJ-E2-AY, NP160N04TUJ-E1-AY
NP160N04TUJ-E2-AY Datasheet Page 1
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NP160N04TUJ-E2-AY Datasheet Page 8
NP160N04TUJ-E2-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NP160N04TUJ-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10350pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 250W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)