NP36P06SLG-E1-AY Datasheet
NP36P06SLG-E1-AY Datasheet
Total Pages: 9
Size: 279.25 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
NP36P06SLG-E1-AY
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 30mOhm @ 18A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 10V FET Feature - Power Dissipation (Max) 1.2W (Ta), 56W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 (MP-3ZK) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
