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NP82N04PDG-E1-AY Datasheet

NP82N04PDG-E1-AY Datasheet
Total Pages: 10
Size: 283.68 KB
Renesas Electronics America
This datasheet covers 1 part numbers: NP82N04PDG-E1-AY
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NP82N04PDG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 41A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 143W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB