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NSS35200MR6T1G Datasheet

NSS35200MR6T1G Datasheet
Total Pages: 6
Size: 114.81 KB
ON Semiconductor
This datasheet covers 1 part numbers: NSS35200MR6T1G
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NSS35200MR6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

35V

Vce Saturation (Max) @ Ib, Ic

310mV @ 20mA, 2A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1.5A, 1.5V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6

Supplier Device Package

6-TSOP