NSS60101DMTTBG Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 180mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V Power - Max 2.27W Frequency - Transition 180MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-WDFN Exposed Pad Supplier Device Package 6-WDFN (2x2) |
Manufacturer ON Semiconductor Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 180mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V Power - Max 2.27W Frequency - Transition 180MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-WDFN Exposed Pad Supplier Device Package 6-WDFN (2x2) |
