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NSV40300MDR2G Datasheet

NSV40300MDR2G Datasheet
Total Pages: 6
Size: 136.75 KB
ON Semiconductor
This datasheet covers 2 part numbers: NSV40300MDR2G, NSS40300MDR2G
NSV40300MDR2G Datasheet Page 1
NSV40300MDR2G Datasheet Page 2
NSV40300MDR2G Datasheet Page 3
NSV40300MDR2G Datasheet Page 4
NSV40300MDR2G Datasheet Page 5
NSV40300MDR2G Datasheet Page 6
NSV40300MDR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP (Dual)

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

170mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 1A, 2V

Power - Max

653mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

NSS40300MDR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP (Dual)

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

170mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 1A, 2V

Power - Max

653mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC