NSV40301MDR2G Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2A, 2V Power - Max 653mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer ON Semiconductor Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V Power - Max 653mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
