NTJD1155LT1 Datasheet
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Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 400mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |
Manufacturer ON Semiconductor Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 400mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |
