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NTMFS4C10NT1G-001 Datasheet

NTMFS4C10NT1G-001 Datasheet
Total Pages: 7
Size: 135.28 KB
ON Semiconductor
This datasheet covers 2 part numbers: NTMFS4C10NT1G-001, NTMFS4C10NT1G
NTMFS4C10NT1G-001 Datasheet Page 1
NTMFS4C10NT1G-001 Datasheet Page 2
NTMFS4C10NT1G-001 Datasheet Page 3
NTMFS4C10NT1G-001 Datasheet Page 4
NTMFS4C10NT1G-001 Datasheet Page 5
NTMFS4C10NT1G-001 Datasheet Page 6
NTMFS4C10NT1G-001 Datasheet Page 7
NTMFS4C10NT1G-001

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.95mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

987pF @ 15V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

NTMFS4C10NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.95mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

987pF @ 15V

FET Feature

-

Power Dissipation (Max)

750mW (Ta), 23.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN