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NTSB30100S-1G Datasheet

NTSB30100S-1G Datasheet
Total Pages: 6
Size: 88.03 KB
ON Semiconductor
This datasheet covers 2 part numbers: NTSB30100S-1G, NTST30100SG
NTSB30100S-1G Datasheet Page 1
NTSB30100S-1G Datasheet Page 2
NTSB30100S-1G Datasheet Page 3
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NTSB30100S-1G Datasheet Page 5
NTSB30100S-1G Datasheet Page 6
NTSB30100S-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

950mV @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

I2PAK (TO-262)

Operating Temperature - Junction

-40°C ~ 150°C

NTST30100SG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

950mV @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Operating Temperature - Junction

-40°C ~ 150°C