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NVATS5A112PLZT4G Datasheet

NVATS5A112PLZT4G Datasheet
Total Pages: 6
Size: 859.8 KB
ON Semiconductor
This datasheet covers 1 part numbers: NVATS5A112PLZT4G
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NVATS5A112PLZT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

27A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

43mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

33.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 20V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63