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NVMFS6H864NWFT1G Datasheet

NVMFS6H864NWFT1G Datasheet
Total Pages: 6
Size: 140.11 KB
ON Semiconductor
This datasheet covers 2 part numbers: NVMFS6H864NWFT1G, NVMFS6H864NT1G
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NVMFS6H864NWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NVMFS6H864NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

6.7A (Ta), 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

32mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads