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PBRN123YS Datasheet

PBRN123YS Datasheet
Total Pages: 17
Size: 736.87 KB
NXP
This datasheet covers 3 part numbers: PBRN123YS,126, PBRN123YK,115, PBRN123YT,215
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Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

700mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

PBRN123YT,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB