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PDTA123JE Datasheet

PDTA123JE Datasheet
Total Pages: 18
Size: 1,050.38 KB
NXP
This datasheet covers 5 part numbers: PDTA123JE,115, PDTA123JM,315, PDTA123JU,115, PDTA123JTVL, PDTA123JT,215
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Manufacturer

NXP USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SC-75

PDTA123JM,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

DFN1006-3

PDTA123JU,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10µA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

-

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70

PDTA123JTVL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB

PDTA123JT,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB