PDTC143ZE Datasheet
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Manufacturer NXP USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 150mW Mounting Type Surface Mount Package / Case SC-75, SOT-416 Supplier Device Package SC-75 |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 250mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package DFN1006-3 |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 200mW Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SC-70 |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 230MHz Power - Max 250mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 230MHz Power - Max 250mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
