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PHB11N06LT Datasheet

PHB11N06LT Datasheet
Total Pages: 12
Size: 114.92 KB
NXP
This datasheet covers 1 part numbers: PHB11N06LT,118
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Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB