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PHB38N02LT Datasheet

PHB38N02LT Datasheet
Total Pages: 13
Size: 234.42 KB
NXP
This datasheet covers 1 part numbers: PHB38N02LT,118
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Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

44.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 5V

Rds On (Max) @ Id, Vgs

16mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 20V

FET Feature

-

Power Dissipation (Max)

57.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB