PHD38N02LT Datasheet
PHD38N02LT Datasheet
Total Pages: 13
Size: 201.27 KB
Nexperia
This datasheet covers 1 part numbers:
PHD38N02LT,118
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 44.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 16mOhm @ 25A, 5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 20V FET Feature - Power Dissipation (Max) 57.6W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
