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PHN210 Datasheet

PHN210 Datasheet
Total Pages: 8
Size: 208.8 KB
NXP
This datasheet covers 1 part numbers: PHN210,118
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PHN210 Datasheet Page 8

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Rds On (Max) @ Id, Vgs

100mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 20V

Power - Max

2W

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO