PHT8N06LT Datasheet
PHT8N06LT Datasheet
Total Pages: 10
Size: 166.86 KB
NXP
This datasheet covers 1 part numbers:
PHT8N06LT,135
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 5V Vgs (Max) ±13V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
