PMCM6501UNEZ Datasheet
PMCM6501UNEZ Datasheet
Total Pages: 15
Size: 384.14 KB
Nexperia
This datasheet covers 1 part numbers:
PMCM6501UNEZ
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 105pF @ 10V FET Feature - Power Dissipation (Max) 400mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WLCSP (1.48x.98) Package / Case 6-XFBGA, WLCSP |
