PMCM6501UPEZ Datasheet
PMCM6501UPEZ Datasheet
Total Pages: 15
Size: 378.73 KB
Nexperia
This datasheet covers 1 part numbers:
PMCM6501UPEZ
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 19.1nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 556mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-WLCSP (2x2) Package / Case 4-XFBGA, WLCSP |
