PMH950UPEH Datasheet
PMH950UPEH Datasheet
Total Pages: 14
Size: 267.17 KB
Nexperia
This datasheet covers 1 part numbers:
PMH950UPEH
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 530mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 36pF @ 10V FET Feature - Power Dissipation (Max) 370mW (Ta), 2.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN0606-3 (SOT8001) Package / Case 3-XFDFN |
