PMN25EN Datasheet
PMN25EN Datasheet
Total Pages: 18
Size: 460.21 KB
NXP
This datasheet covers 1 part numbers:
PMN25EN,115
|
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 6.2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 492pF @ 15V FET Feature - Power Dissipation (Max) 540mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
