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PMN55LN Datasheet

PMN55LN Datasheet
Total Pages: 13
Size: 334.13 KB
NXP
This datasheet covers 1 part numbers: PMN55LN,135
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Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

65mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

13.1nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457