PMPB55ENEAX Datasheet
PMPB55ENEAX Datasheet
Total Pages: 16
Size: 741.77 KB
Nexperia
This datasheet covers 1 part numbers:
PMPB55ENEAX
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 56mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 435pF @ 30V FET Feature - Power Dissipation (Max) 1.65W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN2020MD-6 Package / Case 6-UDFN Exposed Pad |
