PMV45EN Datasheet
PMV45EN Datasheet
Total Pages: 14
Size: 431.28 KB
NXP
This datasheet covers 1 part numbers:
PMV45EN,215
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 42mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 30V FET Feature - Power Dissipation (Max) 280mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB (SOT23) Package / Case TO-236-3, SC-59, SOT-23-3 |
