PMWD19UN Datasheet
PMWD19UN Datasheet
Total Pages: 12
Size: 244.37 KB
NXP
This datasheet covers 1 part numbers:
PMWD19UN,518
|
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.6A Rds On (Max) @ Id, Vgs 23mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1478pF @ 10V Power - Max 2.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
