PMZB200UNEYL Datasheet
PMZB200UNEYL Datasheet
Total Pages: 14
Size: 718.49 KB
Nexperia
This datasheet covers 1 part numbers:
PMZB200UNEYL
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 250mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 89pF @ 15V FET Feature - Power Dissipation (Max) 350mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1006B-3 Package / Case 3-XFDFN |
