PSMN4R8-100BSEJ Datasheet
PSMN4R8-100BSEJ Datasheet
Total Pages: 13
Size: 783.12 KB
Nexperia
This datasheet covers 1 part numbers:
PSMN4R8-100BSEJ
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 278nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 50V FET Feature - Power Dissipation (Max) 405W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
