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QS5U16TR Datasheet

QS5U16TR Datasheet
Total Pages: 5
Size: 72.35 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: QS5U16TR
QS5U16TR Datasheet Page 1
QS5U16TR Datasheet Page 2
QS5U16TR Datasheet Page 3
QS5U16TR Datasheet Page 4
QS5U16TR Datasheet Page 5
QS5U16TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

175pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT5

Package / Case

SOT-23-5 Thin, TSOT-23-5