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QS8M12TCR Datasheet

QS8M12TCR Datasheet
Total Pages: 11
Size: 737.47 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: QS8M12TCR
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QS8M12TCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

42mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 10V

Power - Max

1.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

TSMT8