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R6004ENJTL Datasheet

R6004ENJTL Datasheet
Total Pages: 14
Size: 2,319.52 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: R6004ENJTL
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R6004ENJTL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

980mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS (D2PAK)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB