Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

R6030ENZC8 Datasheet

R6030ENZC8 Datasheet
Total Pages: 13
Size: 939.92 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: R6030ENZC8
R6030ENZC8 Datasheet Page 1
R6030ENZC8 Datasheet Page 2
R6030ENZC8 Datasheet Page 3
R6030ENZC8 Datasheet Page 4
R6030ENZC8 Datasheet Page 5
R6030ENZC8 Datasheet Page 6
R6030ENZC8 Datasheet Page 7
R6030ENZC8 Datasheet Page 8
R6030ENZC8 Datasheet Page 9
R6030ENZC8 Datasheet Page 10
R6030ENZC8 Datasheet Page 11
R6030ENZC8 Datasheet Page 12
R6030ENZC8 Datasheet Page 13
R6030ENZC8

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack