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RCJ081N20TL Datasheet

RCJ081N20TL Datasheet
Total Pages: 13
Size: 1,316.79 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RCJ081N20TL
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RCJ081N20TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

770mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5.25V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS (SC-83)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB