Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RCJ200N20TL Datasheet

RCJ200N20TL Datasheet
Total Pages: 14
Size: 786.61 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RCJ200N20TL
RCJ200N20TL Datasheet Page 1
RCJ200N20TL Datasheet Page 2
RCJ200N20TL Datasheet Page 3
RCJ200N20TL Datasheet Page 4
RCJ200N20TL Datasheet Page 5
RCJ200N20TL Datasheet Page 6
RCJ200N20TL Datasheet Page 7
RCJ200N20TL Datasheet Page 8
RCJ200N20TL Datasheet Page 9
RCJ200N20TL Datasheet Page 10
RCJ200N20TL Datasheet Page 11
RCJ200N20TL Datasheet Page 12
RCJ200N20TL Datasheet Page 13
RCJ200N20TL Datasheet Page 14
RCJ200N20TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTS

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB