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RDN050N20FU6 Datasheet

RDN050N20FU6 Datasheet
Total Pages: 5
Size: 84.23 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RDN050N20FU6
RDN050N20FU6 Datasheet Page 1
RDN050N20FU6 Datasheet Page 2
RDN050N20FU6 Datasheet Page 3
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RDN050N20FU6 Datasheet Page 5
RDN050N20FU6

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

720mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

18.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

292pF @ 10V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FN

Package / Case

TO-220-3 Full Pack