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RDX080N50FU6 Datasheet

RDX080N50FU6 Datasheet
Total Pages: 3
Size: 67.73 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RDX080N50FU6
RDX080N50FU6 Datasheet Page 1
RDX080N50FU6 Datasheet Page 2
RDX080N50FU6 Datasheet Page 3
RDX080N50FU6

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack