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RFP4N100 Datasheet

RFP4N100 Datasheet
Total Pages: 7
Size: 97 KB
ON Semiconductor
This datasheet covers 1 part numbers: RFP4N100
RFP4N100 Datasheet Page 1
RFP4N100 Datasheet Page 2
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RFP4N100 Datasheet Page 7
RFP4N100

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

3.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 20V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3