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RHU003N03T106 Datasheet

RHU003N03T106 Datasheet
Total Pages: 3
Size: 50.41 KB
Rohm Semiconductor
This datasheet covers 1 part numbers: RHU003N03T106
RHU003N03T106 Datasheet Page 1
RHU003N03T106 Datasheet Page 2
RHU003N03T106 Datasheet Page 3
RHU003N03T106

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

UMT3

Package / Case

SC-70, SOT-323