RJK6018DPM-00#T1 Datasheet
RJK6018DPM-00#T1 Datasheet
Total Pages: 7
Size: 77.43 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
RJK6018DPM-00#T1
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 235mOhm @ 15A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PFM Package / Case TO-3PFM, SC-93-3 |
