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RJK60S7DPP-E0#T2 Datasheet

RJK60S7DPP-E0#T2 Datasheet
Total Pages: 8
Size: 196.64 KB
Renesas Electronics America
This datasheet covers 1 part numbers: RJK60S7DPP-E0#T2
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RJK60S7DPP-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

+30V, -20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

34.7W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack