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RN1110MFV Datasheet

RN1110MFV Datasheet
Total Pages: 5
Size: 122.96 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: RN1110MFV,L3F
RN1110MFV Datasheet Page 1
RN1110MFV Datasheet Page 2
RN1110MFV Datasheet Page 3
RN1110MFV Datasheet Page 4
RN1110MFV Datasheet Page 5
RN1110MFV,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

-

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VESM