RN1112ACT(TPL3) Datasheet
RN1112ACT(TPL3) Datasheet
Total Pages: 6
Size: 175.33 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
RN1112ACT(TPL3)
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 80mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition - Power - Max 100mW Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
